60-GHz dual-conversion down-/up-converters using Schottky diode in 0.18 μm CMOS process: An alternative approach for millimeter-wave transceiver

Chin-Chun Meng*, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An alternative approach for 60 GHz transceiver is proposed in this invited paper. The proposed 60 GHz transceiver has GaAs LNA/PA at the front end and the rest of the transceiver is realized in a low-cost foundry CMOS technology with the help of Schottky diode. The 60 GHz transceiver by 65-nm CMOS technology did not show adequate performance and suffers from high R&D cost because of the expensive photo masks while a transceiver based on the GaAs technology is plagued with the high manufacturing cost even though the noise figure of LNA and PAE of PA are good. The recent demonstrated down-/up- converters using Schottky diode in 0.18 μm CMOS process by our group sheds light on this alternative approach for millimeter-wave transceivers.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages658-660
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • 60 GHz
  • CMOS
  • down converter
  • dual conversion
  • millimeter-wave transceiver
  • silicon Schottky diode
  • up converter

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