60-GHz 0.18-μm CMOS Schottky-diode ring-mixer down-converter

Yu Chih Hsiao, Chin-Chun Meng, Ta Wei Wang, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-μm CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57∼64 GHz. The total power consumption is 32.8 mW at 2.5 V.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1202-1204
Number of pages3
ISBN (Electronic)9784902339314
StatePublished - 25 Mar 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014

Publication series

Name2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
CountryJapan
CitySendai
Period4/11/147/11/14

Keywords

  • Dual-conversion down-converter
  • Ring mixer
  • Schottky diode

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