6-bit, 4 GSa/s ADC fabricated in a GaAs HBT process

Ken Poulton*, Knud L. Knudsen, John J. Corcoran, Keh Chung Wang, Randy B. Nubling, Richard L. Pierson, Mau-Chung Chang, Peter M. Asbeck, R. T. Huang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

21 Scopus citations

Abstract

A GaAs/AlGaAs Heterojunction Bipolar transistor (HBT) process was developed to meet the speed, gain and yield requirements for Analog to Digital Converters (ADCs). A 6-bit, 4 giga-samples-per-second ADC was designed and fabricated in this process. The ADC's measured differential nonlinearity is less than and its integral nonlinearity is less than. It has a resolution bandwidth of 2.4 GHz at 3 GSa/s and 1.8 GHz at 4 GSa/s, higher than any ADC published to date.

Original languageEnglish
Pages240-243
Number of pages4
StatePublished - 1 Dec 1994
EventProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
Duration: 16 Oct 199419 Oct 1994

Conference

ConferenceProceedingsof the 1994 IEEE GaAs IC Symposium
CityPhiladelphia, PA, USA
Period16/10/9419/10/94

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