A GaAs/AlGaAs Heterojunction Bipolar transistor (HBT) process was developed to meet the speed, gain and yield requirements for Analog to Digital Converters (ADCs). A 6-bit, 4 giga-samples-per-second ADC was designed and fabricated in this process. The ADC's measured differential nonlinearity is less than and its integral nonlinearity is less than. It has a resolution bandwidth of 2.4 GHz at 3 GSa/s and 1.8 GHz at 4 GSa/s, higher than any ADC published to date.
|Number of pages||4|
|State||Published - 1 Dec 1994|
|Event||Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA|
Duration: 16 Oct 1994 → 19 Oct 1994
|Conference||Proceedingsof the 1994 IEEE GaAs IC Symposium|
|City||Philadelphia, PA, USA|
|Period||16/10/94 → 19/10/94|