55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame; B. S. Meyerson; E. F. Crabbe; C. L. Stanis; J. M. Cotte; J. M.C. Stork; A. C. Megdanis; G. L. Patton; S. R. Stiffler; J. B. Johnson; J. C. Warnock; J. H. Comfort; J. Y.C. Sun

doi:10.1109/VLSIT.1991.705995

55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame^*, B. S. Meyerson, E. F. Crabbe, C. L. Stanis, J. M. Cotte, J. M.C. Stork, A. C. Megdanis, G. L. Patton, S. R. Stiffler, J. B. Johnson, J. C. Warnock, J. H. Comfort, J. Y.C. Sun

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

Original language	English
Pages (from-to)	71-72
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1991.705995
State	Published - Dec 1991
Event	1991 Symposium on VLSI Technology - Oiso, Jpn Duration: 28 May 1991 → 30 May 1991

Access to Document

10.1109/VLSIT.1991.705995

Link to publication in Scopus

Fingerprint Dive into the research topics of '55 GHz polysilicon-emitter graded SiGe-base PNP transistors'. Together they form a unique fingerprint.

Cite this

Harame, D. L., Meyerson, B. S., Crabbe, E. F., Stanis, C. L., Cotte, J. M., Stork, J. M. C., Megdanis, A. C., Patton, G. L., Stiffler, S. R., Johnson, J. B., Warnock, J. C., Comfort, J. H., & Sun, J. Y. C. (1991). 55 GHz polysilicon-emitter graded SiGe-base PNP transistors. Digest of Technical Papers - Symposium on VLSI Technology, 71-72. https://doi.org/10.1109/VLSIT.1991.705995

@article{14f7230b91e1400bbc6e3a3dbbd2abf9,

title = "55 GHz polysilicon-emitter graded SiGe-base PNP transistors",

abstract = "SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.",

author = "Harame, {D. L.} and Meyerson, {B. S.} and Crabbe, {E. F.} and Stanis, {C. L.} and Cotte, {J. M.} and Stork, {J. M.C.} and Megdanis, {A. C.} and Patton, {G. L.} and Stiffler, {S. R.} and Johnson, {J. B.} and Warnock, {J. C.} and Comfort, {J. H.} and Sun, {J. Y.C.}",

year = "1991",

month = dec,

doi = "10.1109/VLSIT.1991.705995",

language = "English",

pages = "71--72",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 28-05-1991 Through 30-05-1991",

}

55 GHz polysilicon-emitter graded SiGe-base PNP transistors. / Harame, D. L.; Meyerson, B. S.; Crabbe, E. F.; Stanis, C. L.; Cotte, J. M.; Stork, J. M.C.; Megdanis, A. C.; Patton, G. L.; Stiffler, S. R.; Johnson, J. B.; Warnock, J. C.; Comfort, J. H.; Sun, J. Y.C.

In: Digest of Technical Papers - Symposium on VLSI Technology, 12.1991, p. 71-72.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - 55 GHz polysilicon-emitter graded SiGe-base PNP transistors

AU - Harame, D. L.

AU - Meyerson, B. S.

AU - Crabbe, E. F.

AU - Stanis, C. L.

AU - Cotte, J. M.

AU - Stork, J. M.C.

AU - Megdanis, A. C.

AU - Patton, G. L.

AU - Stiffler, S. R.

AU - Johnson, J. B.

AU - Warnock, J. C.

AU - Comfort, J. H.

AU - Sun, J. Y.C.

PY - 1991/12

Y1 - 1991/12

N2 - SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

AB - SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

UR - http://www.scopus.com/inward/record.url?scp=0026393174&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.1991.705995

DO - 10.1109/VLSIT.1991.705995

M3 - Conference article

AN - SCOPUS:0026393174

SP - 71

EP - 72

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 28 May 1991 through 30 May 1991

ER -