55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame*, B. S. Meyerson, E. F. Crabbe, C. L. Stanis, J. M. Cotte, J. M.C. Stork, A. C. Megdanis, G. L. Patton, S. R. Stiffler, J. B. Johnson, J. C. Warnock, J. H. Comfort, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

23 Scopus citations

Abstract

SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

Original languageEnglish
Pages (from-to)71-72
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - Dec 1991
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 28 May 199130 May 1991

Fingerprint Dive into the research topics of '55 GHz polysilicon-emitter graded SiGe-base PNP transistors'. Together they form a unique fingerprint.

  • Cite this

    Harame, D. L., Meyerson, B. S., Crabbe, E. F., Stanis, C. L., Cotte, J. M., Stork, J. M. C., Megdanis, A. C., Patton, G. L., Stiffler, S. R., Johnson, J. B., Warnock, J. C., Comfort, J. H., & Sun, J. Y. C. (1991). 55 GHz polysilicon-emitter graded SiGe-base PNP transistors. Digest of Technical Papers - Symposium on VLSI Technology, 71-72. https://doi.org/10.1109/VLSIT.1991.705995