55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame*, B. S. Meyerson, E. F. Crabbe, C. L. Stanis, J. M. Cotte, J. M.C. Stork, A. C. Megdanis, G. L. Patton, S. R. Stiffler, J. B. Johnson, J. C. Warnock, J. H. Comfort, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

23 Scopus citations

Abstract

SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

Original languageEnglish
Pages (from-to)71-72
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - Dec 1991
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 28 May 199130 May 1991

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