5.2 GHz high isolation sige bicmos CMFB gilbert mixer

Chin-Chun Meng*, Tzung Han Wu, Tse Hung Wu, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, IP1dB = -21 dBm and IIP3 = -11 dBm using 0.35 μm SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations.

Original languageAmerican English
Pages (from-to)450-451
Number of pages2
JournalMicrowave and Optical Technology Letters
Volume49
Issue number2
DOIs
StatePublished - 18 Dec 2006

Keywords

  • CMFB
  • Deep trench isolation
  • Gilbert mixer
  • SiGe BiCMOS

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