50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles

James Warnock, John D. Cressler, Keith A. Jenkins, Tze Chiang Chen, Jack Y.C. Sun, Denny D. Tang

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double-polysilicon self-aligned structure, using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal dc characteristics with breakdown voltages adequate for most digital applications. These results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought.

Original languageEnglish
Pages (from-to)475-477
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - Oct 1990

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