50-Å Gate-Oxide MOSFET's at 77 K

Tong Chern Ong, Ping K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

While hot-carrier-induced degradation is aggravated at cryogenic temperature, a very thin gate-oxide (52-Å) device can still tolerate a 3-V power-supply voltage at 77 K. Hot-carrier-induced degradation may not be the limiting factor in choosing the power-supply voltage and special drain structures may be necessary for very thin gate MOSFET's even at 77 K. However, mobility reduction at high VG is more severe both at lower temperatures and for thinner oxides. Electron mobility appears to be oxide-thickness-dependent at 77 K. The dependence of the electron mobility on the normal field is so strong that it results in unusual I-V characteristics such as negative transconductance at 77 K for an oxide field above 3 MV/cm. The I-V characteristics have been modeled with a mobility dependence on VGS of the form µN (1. + v(V(lS - V,/TOKf + (E/E,:)Y 1 for 52-A devices.

Original languageEnglish
Pages (from-to)2129-2135
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume34
Issue number10
DOIs
StatePublished - 1 Jan 1987

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