4H-SiC metal-semiconductor-metal ultraviolet photodetectors in operation of 450 °c

Wei Cheng Lien*, Dung Sheng Tsai, Der Hsien Lien, Debbie G. Senesky, Jr Hau He, Albert P. Pisano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

This work demonstrates the high-temperature operation of metal-semiconductor-metal (MSM) photodetectors (PDs) up to 450 °C using lightly Al-doped epitaxial 4H-SiC thin films. The responsivity of the PDs under 325-nm illumination is 0.0305 A/W at 20-V bias at room temperature. The photocurrent-to-dark-current ratio of the SiC MSM PDs is as high as 1.3 ×10 5 at 25 °C and is 0.62 at 450 °C. The rise/fall time of the PDs is increased slightly from 594μs684μs to 684μs786μs as the temperature increases from room temperature to 400 °C. These results support the use of 4H-SiC PDs in extremely high temperature applications.

Original languageEnglish
Article number6329395
Pages (from-to)1586-1588
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number11
DOIs
StatePublished - 2012

Keywords

  • High-temperature electronics
  • photodetectors (PDs)
  • silicon carbide (SiC)

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