400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

S. J. Chang*, Cheng-Huang Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

222 Scopus citations

Abstract

The 400-nm In0.05Ga0.95N-GaN MQW light-emitting diode (LED) structure and In0.05Ga0.95N-Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy. It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20-mA electroluminescence intensity of InGaN-AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN-GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

Original languageEnglish
Pages (from-to)744-748
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume8
Issue number4
DOIs
StatePublished - 1 Jul 2002

Keywords

  • AlGaN
  • Light-emitting diode
  • Multiquantum well
  • Organometallic vapor phase epitaxy

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    Chang, S. J., Kuo, C-H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Chen, J. F., & Tsai, J. M. (2002). 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes. IEEE Journal on Selected Topics in Quantum Electronics, 8(4), 744-748. https://doi.org/10.1109/JSTQE.2002.801677