40 nm bit-interleaving 12t subthreshold sram with data-aware write-assist

Yi Wei Chiu, Yu Hao Hu, Ming Hsien Tu, Jun Kai Zhao, Yuan Hua Chu, Shyh-Jye Jou, Ching Te Chuang

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

This paper presents a new bit-interleaving 12T subthreshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to improve the Write-ability to mitigate increased device variations at low supply voltage under deep sub-100 nm processes. The disturb-free feature facilitates the bit-interleaving architecture that can reduce multiple-bit errors in a single word and enhance soft error immunity by employing error checking and correction (ECC) techniques. The proposed 12T SRAM cell is demonstrated by a 4 kb SRAM macro implemented in 40 nm general purpose (40GP) CMOS technology. The test chip operates from typical VDD to 350 mV (∼100 mV lower than the threshold voltage) with VDDMIN limited by Read operation. Data can be written successfully for VDD down to 300 mV. The measured maximum operation frequency is 11.5 MHz with total power consumption of 22 μW at 350 mV, 25°C.

Original languageEnglish
Article number6883245
Pages (from-to)2578-2585
Number of pages8
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume61
Issue number9
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Data-aware
  • Low supply voltage
  • Sram
  • Subthreshold voltage
  • Write-assist

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