3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy

Heng Li, Chiao Yun Chang, Hui Yu Cheng, Wei Liang Chen, Yi Hsin Huang, Tien-chang Lu, Yu Ming Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E 2 high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E 2 high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XX
EditorsHeonsu Jeon, Li-Wei Tu, Martin Strassburg, Michael R. Krames
PublisherSPIE
ISBN (Electronic)9781510600034
DOIs
StatePublished - 1 Jan 2016
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX - San Francisco, United States
Duration: 15 Feb 201617 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9768
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
CountryUnited States
CitySan Francisco
Period15/02/1617/02/16

Keywords

  • Confocal Raman microspectroscopy
  • GaN
  • Pattern sapphire substrate

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