3D silicon pixel sensors: Recent test beam results

P. Hansson*, J. Balbuena, C. Barrera, E. Bolle, M. Borri, M. Boscardin, M. Chmeissan, G. F. Dalla Betta, G. Darbo, C. Da Via, E. Devetak, B. Dewilde, D. Su, O. Dorholt, S. Fazio, C. Fleta, C. Gemme, M. Giordani, H. Gjersdal, P. GrenierS. Grinstein, J. Hasi, K. Helle, F. Huegging, P. Jackson, C. Kenney, M. Kocian, I. Korolkov, A. La Rosa, A. Mastroberardino, A. Micelli, C. Nellist, P. Nordahl, F. Rivero, O. Rohne, H. Sandaker, D. Silverstein, K. Sjoebaek, T. Slaviec, J. Stupak, I. Troyano, Jieh-Wen Tsung, D. Tsybychev, N. Wermes, C. Young

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension 50×400μm2. Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison.

Original languageEnglish
Pages (from-to)216-220
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume628
Issue number1
DOIs
StatePublished - 2 Feb 2011

Keywords

  • 3D sensors
  • ATLAS upgrade
  • Radiation detectors
  • SLHC
  • Silicon sensors

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