3D FinFET and other sub-22nm transistors

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.

Original languageEnglish
Title of host publication2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
DOIs
StatePublished - 19 Nov 2012
Event2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 - Singapore, Singapore
Duration: 2 Jul 20126 Jul 2012

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
CountrySingapore
CitySingapore
Period2/07/126/07/12

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