3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

Hui Wen Cheng*, Fu Hai Li, Ming Hung Han, Chun Yen Yiu, Chia Hui Yu, Kuo Fu Lee, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations

Abstract

This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σID > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages15.6.1-15.6.4
DOIs
StatePublished - 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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    Cheng, H. W., Li, F. H., Han, M. H., Yiu, C. Y., Yu, C. H., Lee, K. F., & Li, Y. (2010). 3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 15.6.1-15.6.4). [5703370] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703370