We demonstrate for the first time high performance 35 nm CMOS FinFETs. Symmetrical NFET and PFET off-state leakage is realized with a simple technology. For 1 volt operation at a conservative 24 Å gate oxide thickness, the transistors give drive currents of 1240 μA/μm for NFET and 500 μA/μm for PFET at an off current of 200 nA/μm. Excellent hot carrier immunity is achieved. Device performance parameters exceed ITRS projections.
|Number of pages||2|
|State||Published - 1 Jan 2002|
|Event||2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States|
Duration: 11 Jun 2002 → 13 Jun 2002
|Conference||2002 Symposium on VLSI Technology Digest of Technical Papers|
|Period||11/06/02 → 13/06/02|