We present a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low specific on-state resistance of 1.9 mΩ·cm2 and a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching tr of 98 psec and t f of 96 psec, with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2004|
|Event||IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States|
Duration: 13 Dec 2004 → 15 Dec 2004