350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Masahiro Hikita*, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda, Takashi Egawa

*Corresponding author for this work

Research output: Contribution to journalConference article

25 Scopus citations

Abstract

We present a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low specific on-state resistance of 1.9 mΩ·cm2 and a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching tr of 98 psec and t f of 96 psec, with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.

Original languageEnglish
Pages (from-to)803-806
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

Fingerprint Dive into the research topics of '350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure'. Together they form a unique fingerprint.

Cite this