32-nm multigate Si-nTFET with microwave-annealed abrupt junction

Fu Ju Hou, Po Jung Sung, Fu Kuo Hsueh, Chien Ting Wu, Yao Jen Lee, Mao Nang Chang, Yi-Ming Li, Tuo-Hung Hou

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 μ A/μm , a large current ON/OFF ratio of > 5× 107, and minimal short-channel effect using VG=2 V and VD=1 V.

Original languageEnglish
Article number7225121
Pages (from-to)1808-1813
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number5
DOIs
StatePublished - 1 May 2016

Keywords

  • Microwave annealing (MWA)
  • solid-phase epitaxial regrowth (SPER)
  • tunnel FET (TFET).

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