30-GHz mHEMT divide-by-three injection-locked frequency divider with Marchand balun

Wei Ling Chang, Chin-Chun Meng, Kuan Chang Tsung, Guo Wei Huang

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

In this paper, the first fully integrated 0.15-μm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated. The mHEMT technology has 110-GHz cutoff frequency and high tranconductance. Moreover, the Marchand Balun on the semi-insulating GaAs substrate has a low-loss property to provide broadband and balanced differential signals at millimeter wave frequencies. The divide-by-three ILFD performs the locking range from 28.8 GHz to 31.6 GHz under the supply voltage of 6 V and the core current consumption is 17.8 mA.

Original languageEnglish
Article number7129713
Pages (from-to)68-70
Number of pages3
JournalIEEE Radio and Wireless Symposium, RWS
Volume2015-June
Issue numberJune
DOIs
StatePublished - 19 Jun 2015
Event2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015 - San Diego, United States
Duration: 25 Jan 201528 Jan 2015

Keywords

  • Divide-by-three injection locked frequency divider
  • InAlAs/InGaAs mHEMT
  • Marchand Balun

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