Abstract
We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.
Original language | English |
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Article number | 5357371 |
Pages (from-to) | 105-107 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2010 |
Keywords
- AlGaN/GaN
- High-electron mobility transistor (HEMT)
- Noise figure
- Recessed gate