30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

Chia Ta Chang; Heng-Tung Hsu; Edward Yi Chang; Chien I. Kuo; Jui Chien Huang; Chung Yu Lu; Yasuyuki Miyamoto

doi:10.1109/LED.2009.2037167

30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

Chia Ta Chang^*, Heng-Tung Hsu, Edward Yi Chang, Chien I. Kuo, Jui Chien Huang, Chung Yu Lu, Yasuyuki Miyamoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at V_GS=-3 V and V _DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

Original language	English
Article number	5357371
Pages (from-to)	105-107
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	2
DOIs	https://doi.org/10.1109/LED.2009.2037167
State	Published - 1 Feb 2010

Keywords

AlGaN/GaN
High-electron mobility transistor (HEMT)
Noise figure
Recessed gate

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title = "30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs",

abstract = "We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.",

keywords = "AlGaN/GaN, High-electron mobility transistor (HEMT), Noise figure, Recessed gate",

author = "Chang, {Chia Ta} and Heng-Tung Hsu and Chang, {Edward Yi} and Kuo, {Chien I.} and Huang, {Jui Chien} and Lu, {Chung Yu} and Yasuyuki Miyamoto",

year = "2010",

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doi = "10.1109/LED.2009.2037167",

language = "English",

volume = "31",

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journal = "IEEE Electron Device Letters",

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T1 - 30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

AU - Chang, Chia Ta

AU - Hsu, Heng-Tung

AU - Chang, Edward Yi

AU - Kuo, Chien I.

AU - Huang, Jui Chien

AU - Lu, Chung Yu

AU - Miyamoto, Yasuyuki

PY - 2010/2/1

Y1 - 2010/2/1

N2 - We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

AB - We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

KW - AlGaN/GaN

KW - High-electron mobility transistor (HEMT)

KW - Noise figure

KW - Recessed gate

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DO - 10.1109/LED.2009.2037167

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SP - 105

EP - 107

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 5357371

ER -

30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

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Keywords

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