3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

Pei Der Tseng, Liyang Zhang, Guang Bo Gao, Mau-Chung Chang

Research output: Contribution to journalConference articlepeer-review

52 Scopus citations


A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe/Si heterojunction bipolar transistor (HBT) foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity, and efficiency. At Vcc = 3 V, the power amplifier shows an excellent linearity (first ACPR<-44.1 dBc and second ACPR<-57.1 dBc) up to 28 dBm of output power for CDMA applications. Under the same bias condition, the power amplifier also meets AMPS handset requirements in output power (up to 31 dBm) and linearity (with second and third harmonic to fundamental ratios lower than -37 dBc and -55 dBc, respectively). At the maximum output power level, the worst power-added efficiencies (PAEs) are measured to be 36% for CDMA and 49% for AMPS operations. The power amplifier also tolerates severe output mismatch (VSWR>12:1) up to Vcc = 4 V, with spurs measured to be <-22 dBc in CDMA outputs at two specific tuning angles, but with no spur in AMPS outputs at any tuning angle.

Original languageEnglish
Pages (from-to)1338-1344
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Issue number9
StatePublished - 1 Sep 2000
Event1999 GaAs IC Symposium and 1999 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Monterrey, CA, USA
Duration: 17 Oct 199920 Oct 1999

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