3-V 1-GHz low-noise bandpass amplifier

Chung-Yu Wu; Shuo Yuan Hsiao; Ron Yi Liu

doi:10.1109/ISCAS.1995.523805

3-V 1-GHz low-noise bandpass amplifier

Chung-Yu Wu^*, Shuo Yuan Hsiao, Ron Yi Liu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A 1 GHz low-noise high-Q bandpass amplifier suitable for the application in wireless communication receivers is designed and simulated. By using an integrated inductor with positive-feedback Q enhancement technique, the amplifier can achieve a tunable quality factor larger than 100, and a tunable center frequency between 860 MHz and 1090 MHz. Under 3 V power supply, the amplifier gain is 30 dB at Q = 50, and the noise figure is 3.4 dB in the passband.

Original language	English
Article number	5119294
Pages (from-to)	1964-1967
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	3
DOIs	https://doi.org/10.1109/ISCAS.1995.523805
State	Published - 1 Jan 1995
Event	Proceedings of the 1995 IEEE International Symposium on Circuits and Systems-ISCAS 95. Part 3 (of 3) - Seattle, WA, USA Duration: 30 Apr 1995 → 3 May 1995

Access to Document

10.1109/ISCAS.1995.523805

Fingerprint Dive into the research topics of '3-V 1-GHz low-noise bandpass amplifier'. Together they form a unique fingerprint.

Cite this

@article{63f70bc1c4f847dcba9b9e7bd66afa35,

title = "3-V 1-GHz low-noise bandpass amplifier",

abstract = "A 1 GHz low-noise high-Q bandpass amplifier suitable for the application in wireless communication receivers is designed and simulated. By using an integrated inductor with positive-feedback Q enhancement technique, the amplifier can achieve a tunable quality factor larger than 100, and a tunable center frequency between 860 MHz and 1090 MHz. Under 3 V power supply, the amplifier gain is 30 dB at Q = 50, and the noise figure is 3.4 dB in the passband.",

author = "Chung-Yu Wu and Hsiao, {Shuo Yuan} and Liu, {Ron Yi}",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/ISCAS.1995.523805",

language = "English",

volume = "3",

pages = "1964--1967",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 30-04-1995 Through 03-05-1995",

}

TY - JOUR

T1 - 3-V 1-GHz low-noise bandpass amplifier

AU - Wu, Chung-Yu

AU - Hsiao, Shuo Yuan

AU - Liu, Ron Yi

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A 1 GHz low-noise high-Q bandpass amplifier suitable for the application in wireless communication receivers is designed and simulated. By using an integrated inductor with positive-feedback Q enhancement technique, the amplifier can achieve a tunable quality factor larger than 100, and a tunable center frequency between 860 MHz and 1090 MHz. Under 3 V power supply, the amplifier gain is 30 dB at Q = 50, and the noise figure is 3.4 dB in the passband.

AB - A 1 GHz low-noise high-Q bandpass amplifier suitable for the application in wireless communication receivers is designed and simulated. By using an integrated inductor with positive-feedback Q enhancement technique, the amplifier can achieve a tunable quality factor larger than 100, and a tunable center frequency between 860 MHz and 1090 MHz. Under 3 V power supply, the amplifier gain is 30 dB at Q = 50, and the noise figure is 3.4 dB in the passband.

UR - http://www.scopus.com/inward/record.url?scp=0029204473&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.1995.523805

DO - 10.1109/ISCAS.1995.523805

M3 - Conference article

AN - SCOPUS:0029204473

VL - 3

SP - 1964

EP - 1967

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

SN - 0271-4310

M1 - 5119294

Y2 - 30 April 1995 through 3 May 1995

ER -

3-V 1-GHz low-noise bandpass amplifier

Abstract

Access to Document

Other files and links

Cite this