3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV)

Wen Wei Shen, Yu Min Lin, Shang Chun Chen, Hsiang Hung Chang, Tao Chih Chang, Wei Chung Lo, Chien-Chung Lin, Yung Fa Chou, Ding Ming Kwai, Ming Jer Kao, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This paper describes a four-layer-stacked chip with 45-nm dynamic random access memory (DRAM) dice and 65-nm logic controller, which are interconnected by backside-via-last through-silicon via (TSV) processes. Fabrication of backside-via-last process and multiple die stacking using chip-to-chip bonding are presented with electrical connection between TSV (5-μm-diameter/50-μm-length) and Cu interconnects. Excellent fabrication of stacked dice verified that the micro bumps with 12-μm diameter are bonded using three step temperature bonding profile. Further stacked DRAM/Logic performance and system verifications are demonstrated successfully using 3-D heterogeneous integration.

Original languageEnglish
Pages (from-to)396-402
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume6
Issue number1
DOIs
StatePublished - 13 Mar 2018

Keywords

  • Backside-via-last TSV
  • three-dimensional heterogeneous integration

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    Shen, W. W., Lin, Y. M., Chen, S. C., Chang, H. H., Chang, T. C., Lo, W. C., Lin, C-C., Chou, Y. F., Kwai, D. M., Kao, M. J., & Chen, K-N. (2018). 3-D Stacked Technology of DRAM-Logic Controller Using Through-Silicon Via (TSV). IEEE Journal of the Electron Devices Society, 6(1), 396-402. https://doi.org/10.1109/JEDS.2018.2815344