2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

Ming-Dou Ker*, Tzu Ming Wang, Hung Tai Liao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

Original languageEnglish
Title of host publication2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages820-823
Number of pages4
DOIs
StatePublished - 19 Sep 2008
Event2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
Duration: 18 May 200821 May 2008

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
CountryUnited States
CitySeattle, WA
Period18/05/0821/05/08

Fingerprint Dive into the research topics of '2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue'. Together they form a unique fingerprint.

Cite this