The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.
|Number of pages||4|
|State||Published - 1 Dec 1988|