2Gs/s HBT sample and hold

Ken Poulton*, James S. Kang, John J. Corcoran, Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, Gerard Sullivan

*Corresponding author for this work

Research output: Contribution to conferencePaper

11 Scopus citations

Abstract

The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.

Original languageEnglish
Pages199-202
Number of pages4
StatePublished - 1 Dec 1988

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    Poulton, K., Kang, J. S., Corcoran, J. J., Wang, K. C., Asbeck, P. M., Chang, M-C., & Sullivan, G. (1988). 2Gs/s HBT sample and hold. 199-202.