2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area

Bo-Rong Lin, Tao Nick G. M., Chien-Ping Lee, Henderson Tim, Barry Jia-Fu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
Original languageEnglish
Title of host publication9th European Microwave Integrated Circuit Conference (EuMIC)
PublisherIEEE
Pages1-4
Number of pages4
DOIs
StatePublished - 2014

Keywords

  • HBT; safe operating area; TCAD; simulation
  • HETEROJUNCTION BIPOLAR-TRANSISTORS

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    Lin, B-R., Nick G. M., T., Lee, C-P., Tim, H., & Lin, B. J-F. (2014). 2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area. In 9th European Microwave Integrated Circuit Conference (EuMIC) (pp. 1-4). IEEE. https://doi.org/10.1109/EuMIC.2014.6997776