28nm ultra-low power near-/sub-threshold first-in-first-out (FIFO) memory for multi-bio-signal sensing platforms

Wei Shen Hsu, Po-Tsang Huang, Shang Lin Wu, Ching Te Chuang, Wei Hwang, Ming Hsien Tu, Ming Yu Yin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, an ultra-low-power near-/sub-threshold first-in-first-out (FIFO) memory is proposed for energy-constrained bio-signal sensing applications. This FIFO memory is designed and implemented using folded bit-interleaved 10T near-/sub-threshold SRAM bit-cells, self-timed pointers and bank-level power control circuits. The 10T SRAM cell is proposed for the bit-interleaving structure with 2.4X write static noise margin (SNM) improvement. The folded bit-interleaving structure reduces the bit-line capacitance and avoids long routing wires for the circular self-timed pointers. Additionally, the event-driven self-timed pointers are designed to reduce the power consumption of clock buffers. For further decreasing the overall power dissipation, bank-level column-based power control circuitry is proposed to switch the voltages for different banks to achieve 60.5% power saving. A 512×16 FIFO memory is implemented in UMC 28nm HKMG CMOS technology. Compared with the prior arts, 47X power reduction and 2.7X area efficiency can be achieved by the proposed design techniques.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467394987
DOIs
StatePublished - 31 May 2016
Event2016 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2016 - Hsinchu, Taiwan
Duration: 25 Apr 201627 Apr 2016

Publication series

Name2016 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2016

Conference

Conference2016 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2016
CountryTaiwan
CityHsinchu
Period25/04/1627/04/16

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