280 Gb/s Dual-Polarization Transmitter using Ge-on-Si EAMs for Short-Reach Interconnects

David W.U. Chan, Yeyu Tong, Guan Hong Chen, Chi Wai Chow, Hon Ki Tsang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a dual-polarization 4-level pulse amplitude modulation (PAM-4) transmission using two Ge-EAMs with a 2D grating coupler. Data rates at 280 Gb/s and 260 Gb/s for back-to-back and 500 m SMF transmission are demonstrated.

Original languageEnglish
Title of host publication2020 IEEE Photonics Conference, IPC 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728158914
DOIs
StatePublished - Sep 2020
Event2020 IEEE Photonics Conference, IPC 2020 - Virtual, Vancouver, Canada
Duration: 28 Sep 20201 Oct 2020

Publication series

Name2020 IEEE Photonics Conference, IPC 2020 - Proceedings

Conference

Conference2020 IEEE Photonics Conference, IPC 2020
CountryCanada
CityVirtual, Vancouver
Period28/09/201/10/20

Keywords

  • electro-absorption modulator
  • Polarization division multiplexing
  • silicon photonics

Fingerprint Dive into the research topics of '280 Gb/s Dual-Polarization Transmitter using Ge-on-Si EAMs for Short-Reach Interconnects'. Together they form a unique fingerprint.

Cite this