25 GHz HBT frequency dividers

R. B. Nubling*, N. H. Sheng, K. C. Wang, Mau-Chung Chang, W. J. Ho, G. J. Sullivan, C. W. Farley, P. M. Asbeck

*Corresponding author for this work

Research output: Contribution to conferencePaper

15 Scopus citations

Abstract

A report is presented on a regenerative frequency divider and a static frequency divider implemented with (AlGa)As/GaAs heterojunction bipolar transistors (HBTs). Both dividers have been operated at input frequencies higher than 25 GHz. Also described is a frequency divider implemented with AlInAs/GaInAs HBTs operating up to 17.1 GHz, at considerably reduced power. These frequency dividers are among the fastest ever reported for each of these circuit types and illustrate the feasibility of using direct frequency division in microwave systems up to Ku band.

Original languageEnglish
Pages125-128
Number of pages4
StatePublished - 1 Dec 1989
Event11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989 - San Diego, CA, USA
Duration: 22 Oct 198925 Oct 1989

Conference

Conference11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989
CitySan Diego, CA, USA
Period22/10/8925/10/89

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    Nubling, R. B., Sheng, N. H., Wang, K. C., Chang, M-C., Ho, W. J., Sullivan, G. J., Farley, C. W., & Asbeck, P. M. (1989). 25 GHz HBT frequency dividers. 125-128. Paper presented at 11th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC Symposium 1989, San Diego, CA, USA, .