2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology

J. S. Syu*, Chin-Chun Meng, S. W. Yu, G. W. Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 2.4Z5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 μm SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45Z44-dB imagerejection ratio of the first image (IRR1) and a 50Z48-dB imagerejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages349-353
Number of pages5
Edition6
DOIs
StatePublished - 1 Dec 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

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