Enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54%. Under 1.9GHz π/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.
|Number of pages||3|
|State||Published - 1 Dec 2001|
|Event||2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - Belem, Brazil|
Duration: 6 Aug 2001 → 10 Aug 2001
|Conference||2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference|
|Period||6/08/01 → 10/08/01|
- Low voltage