2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application

S. H. Chen*, Edward Yi Chang, Y. C. Lin, C. S. Lee

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54%. Under 1.9GHz π/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.

Original languageEnglish
Pages127-129
Number of pages3
DOIs
StatePublished - 1 Dec 2001
Event2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - Belem, Brazil
Duration: 6 Aug 200110 Aug 2001

Conference

Conference2001 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
CountryBrazil
CityBelem
Period6/08/0110/08/01

Keywords

  • Enhancement-mode
  • Low voltage
  • PHEMT
  • PHS

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