2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61% power efficiency

S. H. Chen*, Edward Yi Chang, Y. C. Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


A 2.4 V operated enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780371380
StatePublished - 1 Jan 2001
Event2001 Asia-Pacific Microwave Conference - Taipei, Taiwan
Duration: 3 Dec 20016 Dec 2001

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference2001 Asia-Pacific Microwave Conference

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