@inproceedings{bea1679df6c9407d9fbda43a8c8e9caa,
title = "2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61% power efficiency",
abstract = "A 2.4 V operated enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system.",
author = "Chen, {S. H.} and Chang, {Edward Yi} and Lin, {Y. C.}",
year = "2001",
month = jan,
day = "1",
doi = "10.1109/APMC.2001.985371",
language = "English",
isbn = "0780371380",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1291--1294",
booktitle = "Asia-Pacific Microwave Conference Proceedings, APMC",
note = "null ; Conference date: 03-12-2001 Through 06-12-2001",
}