We have developed a novel GaAs-based MODFET with the breakdown voltage (BVdg) of 130V keeping the maximum drain current (Imax) over 300 mA/mm where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W at a supplying voltage of 15 V and a quiescent drain current of 10 A, which is the highest output power exhibited by using GaAs based FET's ever reported.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1999|
|Event||1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA|
Duration: 5 Dec 1999 → 8 Dec 1999