200W GaAs-based MODFET power amplifier for W-CDMA base stations

H. Ishida*, T. Yokoyama, H. Furukawa, T. Tanaka, M. Maeda, S. Morimoto, Y. Ota, Daisuke Ueda, C. Hamaguchi

*Corresponding author for this work

Research output: Contribution to journalConference article

9 Scopus citations

Abstract

We have developed a novel GaAs-based MODFET with the breakdown voltage (BVdg) of 130V keeping the maximum drain current (Imax) over 300 mA/mm where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W at a supplying voltage of 15 V and a quiescent drain current of 10 A, which is the highest output power exhibited by using GaAs based FET's ever reported.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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    Ishida, H., Yokoyama, T., Furukawa, H., Tanaka, T., Maeda, M., Morimoto, S., Ota, Y., Ueda, D., & Hamaguchi, C. (1999). 200W GaAs-based MODFET power amplifier for W-CDMA base stations. Technical Digest - International Electron Devices Meeting, 393-396. https://doi.org/10.1109/IEDM.1999.824177