200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices

Li Cheng Chu; Te Fu Yang; Ru Yu Huang; Yi Ping Su; Chiun He Lin; Chin Long Wey; Ke-Horng Chen; Ying Hsi Lin; Chao Cheng Lee; Jian Ru Lin; Tsung Yen Tsai

doi:10.1109/ASSCC.2015.7387458

200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices

Li Cheng Chu, Te Fu Yang, Ru Yu Huang, Yi Ping Su, Chiun He Lin, Chin Long Wey, Ke-Horng Chen, Ying Hsi Lin, Chao Cheng Lee, Jian Ru Lin, Tsung Yen Tsai

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The proposed deep-standby mode (DSM) is used in 28nm power management unit (PMU) for long-term usage in active implantable medical devices (AIMD). The PMU can upgrade its normal mode with the proposed embedded auto-cancellation (EAC) technique in order to have high accuracy even if the battery is aging and the PVT variations occur. The test chip fabricated in 28nm CMOS process features low quiescent current of 200nA and output voltage accuracy of 98%. Seamless transition among the DSM and the accurate mode demonstrates both low quiescent current and high accuracy can be achieved in the proposed PMU.

Original language	English
Title of host publication	2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467371919
DOIs	https://doi.org/10.1109/ASSCC.2015.7387458
State	Published - 19 Jan 2016
Event	11th IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Xiamen, Fujian, China Duration: 9 Nov 2015 → 11 Nov 2015

Publication series

Name	2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings

Conference

Conference	11th IEEE Asian Solid-State Circuits Conference, A-SSCC 2015
Country	China
City	Xiamen, Fujian
Period	9/11/15 → 11/11/15

Keywords

active implantable medical devices (AIMD)
deep-standby mode (DSM)
embedded auto-cancellation (EAC)
power management unit (PMU)

Access to Document

10.1109/ASSCC.2015.7387458

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Chu, L. C., Yang, T. F., Huang, R. Y., Su, Y. P., Lin, C. H., Wey, C. L., Chen, K-H., Lin, Y. H., Lee, C. C., Lin, J. R., & Tsai, T. Y. (2016). 200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices. In 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings [7387458] (2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2015.7387458

Chu, Li Cheng ; Yang, Te Fu ; Huang, Ru Yu ; Su, Yi Ping ; Lin, Chiun He ; Wey, Chin Long ; Chen, Ke-Horng ; Lin, Ying Hsi ; Lee, Chao Cheng ; Lin, Jian Ru ; Tsai, Tsung Yen. / 200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices. 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. (2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings).

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title = "200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices",

abstract = "The proposed deep-standby mode (DSM) is used in 28nm power management unit (PMU) for long-term usage in active implantable medical devices (AIMD). The PMU can upgrade its normal mode with the proposed embedded auto-cancellation (EAC) technique in order to have high accuracy even if the battery is aging and the PVT variations occur. The test chip fabricated in 28nm CMOS process features low quiescent current of 200nA and output voltage accuracy of 98%. Seamless transition among the DSM and the accurate mode demonstrates both low quiescent current and high accuracy can be achieved in the proposed PMU.",

keywords = "active implantable medical devices (AIMD), deep-standby mode (DSM), embedded auto-cancellation (EAC), power management unit (PMU)",

author = "Chu, {Li Cheng} and Yang, {Te Fu} and Huang, {Ru Yu} and Su, {Yi Ping} and Lin, {Chiun He} and Wey, {Chin Long} and Ke-Horng Chen and Lin, {Ying Hsi} and Lee, {Chao Cheng} and Lin, {Jian Ru} and Tsai, {Tsung Yen}",

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month = jan,

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doi = "10.1109/ASSCC.2015.7387458",

language = "English",

series = "2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings",

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note = "null ; Conference date: 09-11-2015 Through 11-11-2015",

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Chu, LC, Yang, TF, Huang, RY, Su, YP, Lin, CH, Wey, CL, Chen, K-H, Lin, YH, Lee, CC, Lin, JR & Tsai, TY 2016, 200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices. in 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings., 7387458, 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 11th IEEE Asian Solid-State Circuits Conference, A-SSCC 2015, Xiamen, Fujian, China, 9/11/15. https://doi.org/10.1109/ASSCC.2015.7387458

200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices. / Chu, Li Cheng; Yang, Te Fu; Huang, Ru Yu; Su, Yi Ping; Lin, Chiun He; Wey, Chin Long; Chen, Ke-Horng; Lin, Ying Hsi; Lee, Chao Cheng; Lin, Jian Ru; Tsai, Tsung Yen.

2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. 7387458 (2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chu, Li Cheng

AU - Yang, Te Fu

AU - Huang, Ru Yu

AU - Su, Yi Ping

AU - Lin, Chiun He

AU - Wey, Chin Long

AU - Chen, Ke-Horng

AU - Lin, Ying Hsi

AU - Lee, Chao Cheng

AU - Lin, Jian Ru

AU - Tsai, Tsung Yen

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N2 - The proposed deep-standby mode (DSM) is used in 28nm power management unit (PMU) for long-term usage in active implantable medical devices (AIMD). The PMU can upgrade its normal mode with the proposed embedded auto-cancellation (EAC) technique in order to have high accuracy even if the battery is aging and the PVT variations occur. The test chip fabricated in 28nm CMOS process features low quiescent current of 200nA and output voltage accuracy of 98%. Seamless transition among the DSM and the accurate mode demonstrates both low quiescent current and high accuracy can be achieved in the proposed PMU.

AB - The proposed deep-standby mode (DSM) is used in 28nm power management unit (PMU) for long-term usage in active implantable medical devices (AIMD). The PMU can upgrade its normal mode with the proposed embedded auto-cancellation (EAC) technique in order to have high accuracy even if the battery is aging and the PVT variations occur. The test chip fabricated in 28nm CMOS process features low quiescent current of 200nA and output voltage accuracy of 98%. Seamless transition among the DSM and the accurate mode demonstrates both low quiescent current and high accuracy can be achieved in the proposed PMU.

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BT - 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 9 November 2015 through 11 November 2015

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Chu LC, Yang TF, Huang RY, Su YP, Lin CH, Wey CL et al. 200nA low quiescent current deep-standby mode in 28nm DC-DC buck converter for active implantable medical devices. In 2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. 7387458. (2015 IEEE Asian Solid-State Circuits Conference, A-SSCC 2015 - Proceedings). https://doi.org/10.1109/ASSCC.2015.7387458