2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT

L. H. Chu*, Edward Yi Chang, S. H. Chen, Y. C. Lien, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 × 160 μm 2 device shows low knee voltage of 0.3 V, drain-source current (I DS ) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage (V DS ) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency(F t ) is 60 GHz and maximum oscillation frequency(F max ) is 128 Ghz. The noise figure of the 160-μm gate width device at 17 Ghz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT exhibits a high output power density of 453 mW/ mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE.

Original languageEnglish
Pages (from-to)53-55
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number2
DOIs
StatePublished - 1 Feb 2005

Keywords

  • Enhancement mode
  • InGaP
  • InGaP-InGaAs
  • PHEMT
  • Single-voltage supply

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