2-V operated flexible vertical organic transistor with good air stability and bias stress reliability

Kuan Min Huang, Hung Cheng Lin, Kazuaki Kawashima, Itaru Osaka, Hsiao-Wen Zan*, Hsin-Fei Meng, Kazuo Takimiya

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this work, we demonstrated a vertical organic transistor using air-stable material to exhibit good lifetime, good bias-stress reliability, and low operation voltage on a flexible plastic substrate in air ambient. With a synthesized NTz-based semiconducting polymer, the proposed space-charge-limited transistor (SCLT) delivers high on-off current ratio of 160000 and high output current density of 10 mA/cm2 at about 2 V. Without encapsulation, the proposed transistor keeps stable current-voltage relationship for 180 days and has only 0.1 V threshold voltage shift after 5000 s bias stress. No significant degradation can be observed after 1000-times bending and a maximum gain of 14 can be obtained when connecting the flexible transistor with a resistor to form an inverter.

Original languageEnglish
Pages (from-to)325-330
Number of pages6
JournalOrganic Electronics
Volume50
DOIs
StatePublished - 1 Nov 2017

Keywords

  • Air stability
  • Flexible
  • Low voltage operating
  • Vertical organic transistor

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