2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier

Jin Siang Syu, Chin-Chun Meng, Chun Yang, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A 2-GHz single-voltage-supply 0.15-μm depletion-mode (D-mode) pseudomorphic high electron-mobility transistor (pHEMT) low-noise amplifier (LNA) is demonstrated with a proposed process-independent self-biasing scheme. The current-reused technique is also employed to achieve a common-source common-drain two-stage LNA under a dc current of 10.85 mA at a 3-V supply. As a result, the proposed LNA achieves 20-dB power gain and 1.35-dB noise figure (NF) at 2 GHz while the minimum NF=1.3 dB occurs at 2.4 GHz.

Original languageEnglish
Title of host publicationRWS 2018 - Proceedings
Subtitle of host publication2018 IEEE Radio and Wireless Symposium
PublisherIEEE Computer Society
Pages84-87
Number of pages4
ISBN (Electronic)9781538607091
DOIs
StatePublished - 28 Feb 2018
Event2018 IEEE Radio and Wireless Symposium, RWS 2018 - Anaheim, United States
Duration: 14 Jan 201817 Jan 2018

Publication series

NameIEEE Radio and Wireless Symposium, RWS
Volume2018-January
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974

Conference

Conference2018 IEEE Radio and Wireless Symposium, RWS 2018
CountryUnited States
CityAnaheim
Period14/01/1817/01/18

Keywords

  • Current-reuse
  • Low-noise amplifier (LNA)
  • Pseudomorphic high electron-mobility transistor (pHEMT)
  • Singlevoltage-supply

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    Syu, J. S., Meng, C-C., Yang, C., & Huang, G. W. (2018). 2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier. In RWS 2018 - Proceedings: 2018 IEEE Radio and Wireless Symposium (pp. 84-87). (IEEE Radio and Wireless Symposium, RWS; Vol. 2018-January). IEEE Computer Society. https://doi.org/10.1109/RWS.2018.8304952