1fF ESD protection device for gigahertz high-frequency output ESD protection

J. H. Lee*, S. C. Huang, Y. H. Wu, Ke-Horng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A mutual-protection scheme is proposed to achieve an ultra-low capacitance electrostatic discharge (ESD) protection device. The ESD protection device can not only dissipate ESD current, but also can make the vulnerable output transistor have the ESD protection capability. Namely, the output transistor can also protect ICs and help the ESD protection device to share the ESD current. Using this scheme can discharge more ESD current than the summation current of the two individual devices. From the ESD test result, it can achieve the required ESD level by using the ultra-low capacitance ESD protection device (∼1.2fF).

Original languageEnglish
Pages (from-to)1021-1022
Number of pages2
JournalElectronics Letters
Volume47
Issue number18
DOIs
StatePublished - 1 Sep 2011

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