188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

Z. Tang*, H. Hsia, Hao-Chung Kuo, D. Caruth, G. E. Stillman, M. Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The authors have fabricated 0.14 μm T-gate, doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs. An extrinsic peak transconductance of 722 mS/mm and a maximum current density of 761 mA/mm were obtained. The doped-channel HFET exhibits excellent RF performance with fT = 188 GHz and fmax = 225 GHz at Vds = 1.5 V. These are state-of-the-art results for doped-channel HFETs, and are comparable to the best reported performance of InP p-HEMTs with similar gate length.

Original languageEnglish
Pages (from-to)1657-1659
Number of pages3
JournalElectronics Letters
Issue number19
StatePublished - 1 Jan 2000

Fingerprint Dive into the research topics of '188 GHz doped-channel In<sub>0.8</sub>Ga<sub>0.2</sub>P/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP HFETs'. Together they form a unique fingerprint.

Cite this