Abstract
Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).
| Original language | English |
|---|---|
| Pages (from-to) | 997-1000 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 3 |
| DOIs | |
| State | Published - 1 Jan 1990 |
| Event | 1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA Duration: 8 May 2010 → 10 May 2010 |
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Wang, N. L., Sheng, N. H., Ho, W. J., Chang, M-C., Sullivan, G. J., Higgins, J. A., & Asbeck, P. M. (1990). 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT. IEEE MTT-S International Microwave Symposium Digest, 3, 997-1000. https://doi.org/10.1109/MWSYM.1990.99747