18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

N. L. Wang*, N. H. Sheng, W. J. Ho, Mau-Chung Chang, G. J. Sullivan, J. A. Higgins, P. M. Asbeck

*Corresponding author for this work

Research output: Contribution to journalConference article

20 Scopus citations

Abstract

Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).

Original languageEnglish
Pages (from-to)997-1000
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
DOIs
StatePublished - 1 Jan 1990
Event1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA
Duration: 8 May 201010 May 2010

Fingerprint Dive into the research topics of '18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT'. Together they form a unique fingerprint.

  • Cite this