18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

N. L. Wang; N. H. Sheng; W. J. Ho; Mau-Chung Chang; G. J. Sullivan; J. A. Higgins; P. M. Asbeck

doi:10.1109/MWSYM.1990.99747

18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

N. L. Wang^*, N. H. Sheng, W. J. Ho, Mau-Chung Chang, G. J. Sullivan, J. A. Higgins, P. M. Asbeck

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).

Original language	English
Pages (from-to)	997-1000
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
DOIs	https://doi.org/10.1109/MWSYM.1990.99747
State	Published - 1 Jan 1990
Event	1990 IEEE MTT-S International Microwave Symposium Digest Part 3 (of 3) - Dallas, TX, USA Duration: 8 May 2010 → 10 May 2010

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title = "18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT",

abstract = "Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).",

author = "Wang, {N. L.} and Sheng, {N. H.} and Ho, {W. J.} and Mau-Chung Chang and Sullivan, {G. J.} and Higgins, {J. A.} and Asbeck, {P. M.}",

year = "1990",

month = jan,

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doi = "10.1109/MWSYM.1990.99747",

language = "English",

volume = "3",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-05-2010 Through 10-05-2010",

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T1 - 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT

AU - Wang, N. L.

AU - Sheng, N. H.

AU - Ho, W. J.

AU - Chang, Mau-Chung

AU - Sullivan, G. J.

AU - Higgins, J. A.

AU - Asbeck, P. M.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).

AB - Outstanding power performance has been achieved from an AlGaAs/GaAs heterostructure bipolar transistor (HBT) at 18 GHz. A common emitter HBT has achieved 48.5% added efficiency, 6.2-dB associated gain, and 0.17-W output power. Common base operation of the HBT exhibits higher gain at 18 GHz: 0.358 W (3.58 W/mm) was achieved with 11.4-dB gain and 43% added efficiency; at a reduced power level of 0.174 W (1.74 W/mm), 15.3-dB associated power gain was achieved with 40% efficiency. This performance compares favorably with the results reported for MESFETs, HEMTs (high-electron-mobility transistors), and PBTs (permeable-base transistors).

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JO - IEEE MTT-S International Microwave Symposium Digest

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