160 GHz parametric passive frequency doubler in CMOS 180nm technology

Beng Meng Chen; Zuo-Min Tsai

doi:10.1109/iWEM.2015.7365065

160 GHz parametric passive frequency doubler in CMOS 180nm technology

Beng Meng Chen, Zuo-Min Tsai

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A parametric CMOS passive frequency doubler is reported in this paper. The circuit is implemented in 180 nm CMOS but oses a conservative 0.5um gate length and produces an output between 150GHz and 162 GHz with a minimum measured conversion loss of 19.15 dB. The maximum output power is -26.9 dBm by -4.25dBm input power. The proposed design series a transmission line at the transistor source and series a 500 Ohms resistance at the transistor body in order to improve the performance.

Original language	English
Title of host publication	2015 International Workshop on Electromagnetics
Subtitle of host publication	Applications and Student Innovation Competition, iWEM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467369527
DOIs	https://doi.org/10.1109/iWEM.2015.7365065
State	Published - 23 Dec 2015
Event	International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015 - Hsin-Chu, Taiwan Duration: 16 Nov 2015 → 18 Nov 2015

Publication series

Name	2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015

Conference

Conference	International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015
Country	Taiwan
City	Hsin-Chu
Period	16/11/15 → 18/11/15

Keywords

CMOS
frequency doubler
millimeter-wave
parametric circuit

Access to Document

10.1109/iWEM.2015.7365065

Link to publication in Scopus

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Chen, B. M., & Tsai , Z-M. (2015). 160 GHz parametric passive frequency doubler in CMOS 180nm technology. In 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015 [7365065] (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iWEM.2015.7365065

Chen, Beng Meng ; Tsai , Zuo-Min. / 160 GHz parametric passive frequency doubler in CMOS 180nm technology. 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015).

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title = "160 GHz parametric passive frequency doubler in CMOS 180nm technology",

abstract = "A parametric CMOS passive frequency doubler is reported in this paper. The circuit is implemented in 180 nm CMOS but oses a conservative 0.5um gate length and produces an output between 150GHz and 162 GHz with a minimum measured conversion loss of 19.15 dB. The maximum output power is -26.9 dBm by -4.25dBm input power. The proposed design series a transmission line at the transistor source and series a 500 Ohms resistance at the transistor body in order to improve the performance.",

keywords = "CMOS, frequency doubler, millimeter-wave, parametric circuit",

author = "Chen, {Beng Meng} and Zuo-Min Tsai",

year = "2015",

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doi = "10.1109/iWEM.2015.7365065",

language = "English",

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Chen, BM & Tsai , Z-M 2015, 160 GHz parametric passive frequency doubler in CMOS 180nm technology. in 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015., 7365065, 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015, Institute of Electrical and Electronics Engineers Inc., International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015, Hsin-Chu, Taiwan, 16/11/15. https://doi.org/10.1109/iWEM.2015.7365065

160 GHz parametric passive frequency doubler in CMOS 180nm technology. / Chen, Beng Meng; Tsai , Zuo-Min.

2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7365065 (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Chen BM, Tsai Z-M. 160 GHz parametric passive frequency doubler in CMOS 180nm technology. In 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7365065. (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015). https://doi.org/10.1109/iWEM.2015.7365065