@inproceedings{5738dc1808834cc3916c24df8834811e,
title = "160 GHz parametric passive frequency doubler in CMOS 180nm technology",
abstract = "A parametric CMOS passive frequency doubler is reported in this paper. The circuit is implemented in 180 nm CMOS but oses a conservative 0.5um gate length and produces an output between 150GHz and 162 GHz with a minimum measured conversion loss of 19.15 dB. The maximum output power is -26.9 dBm by -4.25dBm input power. The proposed design series a transmission line at the transistor source and series a 500 Ohms resistance at the transistor body in order to improve the performance.",
keywords = "CMOS, frequency doubler, millimeter-wave, parametric circuit",
author = "Chen, {Beng Meng} and Zuo-Min Tsai",
year = "2015",
month = dec,
day = "23",
doi = "10.1109/iWEM.2015.7365065",
language = "English",
series = "2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 International Workshop on Electromagnetics",
address = "United States",
note = "null ; Conference date: 16-11-2015 Through 18-11-2015",
}