1.55 μm emission from InAs quantum dots grown on GaAs

Tung Po Hsieh*, Pei Chin Chiu, Jen Inn Chyi, Nien Tze Yeh, Wen Jeng Ho, Wen-Hao Chang, Tzu Min Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μm when an In0.25 Ga0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μm with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.

Original languageEnglish
Article number151903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number15
DOIs
StatePublished - 10 Oct 2005

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