15.3 A 100W and 91% GaN-Based Class-E Wireless-Power-Transfer Transmitter with Differential-Impedance-Matching Control for Charging Multiple Devices

Cheng Yu Xie, Shang Hsien Yang, Shen Fu Lu, Fa Yi Lin, Yen An Lin, You Zheng Ou-Yang, Ke-Horng Chen, Kuo Chi Liu, Yin Hsi Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Having multiple devices charged by a wireless-power-transfer (WPT) system has become more common as illustrated in Fig. 15.3.1. A wide-power-range (no load ∼ 100 {W}), compact, and efficient WPT system needs to include the following features. First, an impedance-matching technique that achieves zero-voltage switching (ZVS) and zero voltage-derivative switching (ZVDS) on a Gallium Nitride (GaN) switch is needed to reduce the efficiency loss caused by hard switching (HS) and reverse conduction (RC). Second, under high-power conditions, it is desirable to reduce the voltage and current stress on each switch and passive components. Third, there is a need to reduce the number of external components for compact size. In [1] and [2], an external capacitor array for impedance matching occupies a large printed circuit board (PCB) area. If the output power is as high as 100W, the controlled switch needs to withstand high voltage stresses of up to 600V. The fractional-capacitance tuning technique in [3] achieves a wide range of equivalent capacitance, but there are still high-voltage-stress problems similar to [1], [2]. Although [4] provides a high-power solution, the voltage-controlled-capacitance (VCC) technique needs to tune the internal parasitic capacitance, {C}-{ {OSS}}, from 350 to 3500pF and thus requires more external components and large bias voltage {V}-{ {BIAS}}.

Original languageEnglish
Title of host publication2019 IEEE International Solid-State Circuits Conference, ISSCC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages242-244
Number of pages3
ISBN (Electronic)9781538685310
DOIs
StatePublished - 6 Mar 2019
Event2019 IEEE International Solid-State Circuits Conference, ISSCC 2019 - San Francisco, United States
Duration: 17 Feb 201921 Feb 2019

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume2019-February
ISSN (Print)0193-6530

Conference

Conference2019 IEEE International Solid-State Circuits Conference, ISSCC 2019
CountryUnited States
CitySan Francisco
Period17/02/1921/02/19

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