150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA

Yu Chen Chen; Kuo-Jui Lin; Pei Yin Su; Hsu Chieh Cheng

doi:10.1117/12.928905

150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA

Yu Chen Chen^*, Kuo-Jui Lin, Pei Yin Su, Hsu Chieh Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm² and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.

Original language	English
Title of host publication	Photonic Fiber and Crystal Devices
Subtitle of host publication	Advances in Materials and Innovations in Device Applications VI
DOIs	https://doi.org/10.1117/12.928905
State	Published - 1 Dec 2012
Event	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI - San Diego, CA, United States Duration: 12 Aug 2012 → 13 Aug 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8497
ISSN (Print)	0277-786X

Conference

Conference	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
Country	United States
City	San Diego, CA
Period	12/08/12 → 13/08/12

Keywords

External-cavity lasers
Quantum-dot lasers
Semiconductor lasers
Tunable lasers

Access to Document

10.1117/12.928905

Link to publication in Scopus

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Chen, Y. C., Lin, K-J., Su, P. Y., & Cheng, H. C. (2012). 150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA. In Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI [84970N] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8497). https://doi.org/10.1117/12.928905

@inproceedings{fd674d2be4704ecf85a8c48904f8eb78,

title = "150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA",

abstract = "Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.",

keywords = "External-cavity lasers, Quantum-dot lasers, Semiconductor lasers, Tunable lasers",

author = "Chen, {Yu Chen} and Kuo-Jui Lin and Su, {Pei Yin} and Cheng, {Hsu Chieh}",

year = "2012",

month = dec,

day = "1",

doi = "10.1117/12.928905",

language = "English",

isbn = "9780819492142",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Photonic Fiber and Crystal Devices",

note = "null ; Conference date: 12-08-2012 Through 13-08-2012",

}

Chen, YC, Lin, K-J, Su, PY & Cheng, HC 2012, 150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA. in Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI., 84970N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI, San Diego, CA, United States, 12/08/12. https://doi.org/10.1117/12.928905

150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA. / Chen, Yu Chen; Lin, Kuo-Jui; Su, Pei Yin; Cheng, Hsu Chieh.

Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI. 2012. 84970N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8497).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA

AU - Chen, Yu Chen

AU - Lin, Kuo-Jui

AU - Su, Pei Yin

AU - Cheng, Hsu Chieh

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.

AB - Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.

KW - External-cavity lasers

KW - Quantum-dot lasers

KW - Semiconductor lasers

KW - Tunable lasers

UR - http://www.scopus.com/inward/record.url?scp=84872578029&partnerID=8YFLogxK

U2 - 10.1117/12.928905

DO - 10.1117/12.928905

M3 - Conference contribution

AN - SCOPUS:84872578029

SN - 9780819492142

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Photonic Fiber and Crystal Devices

Y2 - 12 August 2012 through 13 August 2012

ER -