A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order intermodulation (IM3) distortion for up to 0.9Vpp at 40MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1×10-3 mm2 and the power consumption is 9.5mW under a 1.5-V supply voltage.
|Number of pages||4|
|State||Published - 1 Dec 2006|
|Event||2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006 - Hangzhou, China|
Duration: 13 Nov 2006 → 15 Nov 2006
|Conference||2006 IEEE Asian Solid-State Circuits Conference, ASSCC 2006|
|Period||13/11/06 → 15/11/06|