1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment

Chih Tung Yeh, Wei Kai Wang, Yi Siang Shen, Ray-Hua Horng

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Abstract

Enhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from %8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at VGS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10-6mA/mm, ION/IOFF ratio of approximately 108, and high breakdown voltage of 1480V were obtained.

Original languageEnglish
Article number05FK06
JournalJapanese Journal of Applied Physics
Volume55
Issue number5
DOIs
StatePublished - 1 May 2016

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