1.3 μm light emission froni Al 2 O 3 /Si 1-x Ge x /Si MOS tunnel diodes

C. Y. Lin, H. Y. Lee, Albert Chin, Y. T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Light emission at ∼1.3 μm was measured at room temperature in Al 2 O 3 /Si 1-x Ge x MOS tunnel diodes on Si substrates. The merits of using Si 1-x Ge x in MOS light-emitting devices is that they can be embedded in a CMOS process, and have good efficiency (with photon energy < E g of Si)

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 1 Jan 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume1

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
CountryTaiwan
CityTaipei
Period15/12/0319/12/03

Fingerprint Dive into the research topics of '1.3 μm light emission froni Al <sub>2</sub> O <sub>3</sub> /Si <sub>1-x</sub> Ge <sub>x</sub> /Si MOS tunnel diodes'. Together they form a unique fingerprint.

Cite this