1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

Hsin-Chieh Yu, Y. K. Su, S. J. Chang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

Original languageEnglish
Pages (from-to)418-420
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number2
DOIs
StatePublished - 15 Jan 2006

Keywords

  • Fully doped distributed Bragg reflector (DBR)
  • InAs quantum dot (QD)
  • molecular beam epitaxy (MBE)
  • vertical-cavity surface-emitting laser (VCSEL)

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