Abstract
A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.
Original language | English |
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Number of pages | 1 |
DOIs | |
State | Published - 1 Dec 2000 |
Event | 12 Asia-Pacific Microwave Conference - Sydney, Australia Duration: 3 Dec 2000 → 6 Dec 2000 |
Conference
Conference | 12 Asia-Pacific Microwave Conference |
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City | Sydney, Australia |
Period | 3/12/00 → 6/12/00 |