1.2-volt operation power PHEMT for personal handy phone handset application

Edward Yi Chang*, Di Houng Lee, S. H. Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.

Original languageEnglish
Number of pages1
DOIs
StatePublished - 1 Dec 2000
Event12 Asia-Pacific Microwave Conference - Sydney, Australia
Duration: 3 Dec 20006 Dec 2000

Conference

Conference12 Asia-Pacific Microwave Conference
CitySydney, Australia
Period3/12/006/12/00

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