1.2-volt operation power PHEMT for personal handy phone handset application

Edward Yi Chang; Di Houng Lee; S. H. Chen

doi:10.1109/APMC.2000.925757

1.2-volt operation power PHEMT for personal handy phone handset application

Edward Yi Chang^*, Di Houng Lee, S. H. Chen

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to conference › Paper

Abstract

A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.

Original language	English
Number of pages	1
DOIs	https://doi.org/10.1109/APMC.2000.925757
State	Published - 1 Dec 2000
Event	12 Asia-Pacific Microwave Conference - Sydney, Australia Duration: 3 Dec 2000 → 6 Dec 2000

Conference

Conference	12 Asia-Pacific Microwave Conference
City	Sydney, Australia
Period	3/12/00 → 6/12/00

Access to Document

10.1109/APMC.2000.925757

Link to publication in Scopus

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Chang, E. Y., Lee, D. H., & Chen, S. H. (2000). 1.2-volt operation power PHEMT for personal handy phone handset application. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, . https://doi.org/10.1109/APMC.2000.925757

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abstract = "A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.",

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N2 - A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.

AB - A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.

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