A high efficiency and high linearity 1.2 V-operational Al-GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for digital wireless personal handy phone (PHS) handset application has been developed. The device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias. Under 1.9 GHz p/4-shifted QPSK modulated PHS signal, the device shows an output power of 22.02 dBm with linear efficiency of 37% and adjacent channel leakage power (ACP) of -56.86 dBc at 600 kHz apart from the center frequency. The device developed shows excellent performance at 1.2 V operation and can be used for low voltage PHS handset application.
|Number of pages||1|
|State||Published - 1 Dec 2000|
|Event||12 Asia-Pacific Microwave Conference - Sydney, Australia|
Duration: 3 Dec 2000 → 6 Dec 2000
|Conference||12 Asia-Pacific Microwave Conference|
|Period||3/12/00 → 6/12/00|