11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique

Hung Ju Wei, Chin-Chun Meng*, Yu Wen Chang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated at 4.1-11.8 GHz. In this experiment, a conventional static frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of fT and optimizing the Iread/Ilatch ratio, the maximum operating frequency of the HLO-FF is greatly improved due to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA at the supply voltage of 5 V.

Original languageEnglish
Pages (from-to)2642-2645
Number of pages4
JournalMicrowave and Optical Technology Letters
Issue number10
StatePublished - 1 Oct 2008


  • Emitter coupled logic
  • Frequency divider
  • GaInP/GaAs HBT
  • HLO-FF
  • Static

Fingerprint Dive into the research topics of '11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique'. Together they form a unique fingerprint.

Cite this