{113} Defect-engineered silicon light-emitting diodes

G. Z. Pan*, R. P. Ostroumov, Y. G. Lian, King-Ning Tu, K. L. Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

17 Scopus citations

Abstract

We correlated electroluminescence of p-n junction silicon light-emitting diodes (Si LEDs) with boron implant-induced defects and found that {113} defects other than dislocation loops result in strong silicon light emissions. The electroluminescence of {113} defect engineered Si LEDs is twenty-five times higher than dislocation loop engineered Si LEDs. This finding, for the first time, is highly significant for monolithic Si nanophotonics.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

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